InP based HBTs-technology, performance and applications

An overview is given of the research activities and the state of development of InGaAs(P)/InP and InAlAs/InGaAs/InP HBTs (heterojunction bipolar transistors) in Europe. Although only a few groups are working on InP-based HBTs, reasonable device performance has been achieved. Nearly all the results on InP-based HBTs are from groups whose aim is to integrate these devices in OEICs (optoelectronic integrated circuits) for optical communication systems in the wavelength range from 1.3 to 1.55 mu m. The good results obtained indicate that, after solving some problems like surface passivation, material selective dry etching, and planarization, the high-speed potential of InP-based HBTs can be made commercially available.<>