A quarter-micron interconnection technology using Al-Si-Cu/TiN alternated layers

A novel interconnection structure using Al-Si-Cu/TiN alternated layers has been investigated as a quarter-micron interconnection candidate for 256 MDRAM. A TiN/Al-1%Si-0.5%Cu/TiN/Al-1%Si-0.5%Cu/TiN/Ti layered film structure was designed for both electro- and stress-migration-resistant interconnections. This alternated layer structure has extremely high endurances in terms of mechanical hardness, tensile strength, and electromigration lifetime.<>