High reliable Al-Si alloy/Si contacts by rapid thermal sintering

Rapid thermal annealing technology has been applied to the sintering process for Al-Si alloy. Contact resistance was kept low by this technique, and low contact resistance was maintained even after postsintering heat treatment. The relationship between contact resistance and the number of Si nodules has been investigated. Si nodules and the Si at contact holes are considered to be precipitation nuclei for dissolved Si in Al-Si alloy. Precipitating Si is shared by Si nodules and contact holes after heat treatment. This model explains contact resistance change during heat treatments.<>