The higher order temperature compensation of bandgap voltage references

A novel method for the curvature correction of bandgap references is introduced. Two well-known circuit topologies with no additional compensation are briefly analyzed. The causes of strong higher-order nonlinearities are presented. The square-law I/sub D/-V/sub DS/ characteristics of the MOS-transistor are used for compensating the nonlinear temperature dependence of the reference output voltage. The temperature behavior of the MOS-transistor is analyzed in detail. The effect of process variations for both temperature stability and PSR is also discussed.<>