A novel simulation of power switching bipolar transistor

The authors have developed a one-dimensional power bipolar transistor primary model able to help circuit designers in the choice of power components. In particular, the model must accurately predict electrical and thermal constraints during switching. Classical SPICE models do not run satisfactorily for this purpose. Thus, the authors propose an original modeling method that takes advantage of a regional hypothesis relying on bond-graph theory. Each region inside the device is described by a state-variable model, and the high-level injection collector region modeling requires functional analysis techniques. With very few input parameters, primary results fit well with experiments.<>