A monolithic approach for Q-band integrated active phased array transmitting antenna

A monolithic design approach for a Q-band integrated active phased array transmitting antenna using InGaAs/GaAs pseudomorphic HEMT (high electron mobility transistor) technology is proposed. Major components, including a high-gain, high-efficiency monolithic amplifier and a three-bit switched line, monolithic phase shifter, have been developed and tested. The amplifier measured gain is 19.5 dB with 20% efficiency at 44 GHz. The phase shifter has a measured insertion loss of 7.5 dB and a phase error of less than 7 degrees from 43 to 45 GHz for all phase states. A design of a 2*2 active subarray on GaAs substrate is also presented.<>