Lumped and distributed scaling of MESFETs

In power amplifier applications, it is very common to scaleup large MESFETs at the output from smaller MESFET devices that are easily measured and characterized. A systematic procedure is given to predict the small-signal performance of large devices from the measured and well-characterized elementary cells. The emphasis is on the distributed scaling and the method is compared with lumped scaling. Manifold distribution effects and other parasitics (such as airbridges, distribution of via holes) are accounted for. The prediction using distributed scaling showed good agreement with measured results.<>