GaAs power MESFET performance sensitivity to profile and process parameter variations

Large signal performance sensitivities are calculated and compared for power GaAs MESFETs fabricated with uniform, ion-implanted, and lo-hi-lo doping profiles. Variations in radio-frequency (RF) power, power-added efficiency, gain, and device linearity are determined for the various devices as a function of process-dependent parameters. It is demonstrated that the channel doping profile design and breakdown voltage have the most significant influence on large-signal RF performance.<>