Radiation-induced effects on special super large n-channel power MOSFETS for space applications

Outlines the design, manufacture, and special processing techniques used to attain a solution to radiation-induced effects on super large N-channel power MOSFET dies, sizes 9 and 11, which are approximately 500*690 mils and 772*1022 mils, and still meet the critical and unique requirements of the remote power controller (RPC), the remote bus isolator (RBI), and, above all, the DC-to-DC converter (DDCU) for Space Station Freedom.<>