A simple GaAs MESFET model for circuit simulation reflecting the dependence on device geometry and process

A GaAs MESFET model intended for CAD (computer-aided design) of ICs is developed. As a result of the built-in dependence on device geometry and process, the model can be used to estimate circuit sensitivity to process variations. Theoretical predictions compare well with experimental results. The usefulness of the developed model for circuit design is demonstrated using the examples of typical buffered FET logic circuits.<>