High frequency transistors on MOCVD grown InGaAs/InP

The fabrication of InGaAs MISFETs with 1- mu m gate lengths and up to 1-mm gate widths using an ion-implanted process is reported. The devices demonstrated an output power density of 1.07 W/mm at 9.7 GHz with a corresponding power gain and power-added efficiency of 4.3 dB and 38%, respectively. A novel plasma deposited silicon/silicon oxide gate insulator was employed to achieve an output power stability within 1.2% over 24 h of continuous operation, with a corresponding drain bias current increase of less than 4%.<>