Sol-gel derived PZT thin films for switching applications

Ferroelectric lead zirconate titanate (PZT) thin films were fabricated through the sol-gel spin-on technique to study the thickness dependence of electrical characteristics. At saturation, the films exhibited a dielectric constant of 1300, a dissipation factor of 0.03, a Curie temperature of 366 degrees C, remanent polarization of 36 mu C/cm/sup 2/, coercivity of 40 kV/cm, and dielectric breakdown strength of over 1 MV/cm. The temperature dependence of permittivity showed an anomalous behavior with annealing temperature.<>