Submicron gate AlInAs/GaInAs HEMT by MOCVD and MBE

Reports on the achievement of high performance submicron gate Al/sub 0.48/In/sub 0.52/As/Ga/sub 0.47/In/sub 0.53/As HEMT's both on atmospheric pressure MOCVD and on MBE grown heterostructures. Very high density and high mobility modulation doped heterostructures have been successfully grown by AP-MOCVD. FET's, having gate lengths of 0.6 mu m show transconductances as high as 680 mS/mm on MOCVD grown layers. A current gain cut-off frequency as high as 56 GHz and a maximum stable gain (MSG) value of about 12 dB at 26 GHz were extracted from the RF measurements on MBE grown layers.<>