Highly consistent FET model parameter extraction based on broadband S-parameter measurements

A novel FET model parameter extraction procedure which yields highly consistent model element values of a widely used 15-element model is proposed. This procedure delivers highly consistent model element values from measured S-parameter data up to 40 GHz. It uses only one additional bias-point for the separate determination of the high-frequency value of the gate resistance R/sub g/. With R/sub g/ known, all other elements can be extracted from hot S-parameters. Especially R/sub i/ R/sub s/, and R/sub d/ are found as bias-dependent elements. The attained consistency in the extracted results makes investigation on model topology mismatch to the measured scattering parameters possible.<>