A complementary high current gain transistor for use in a CMOS compatible technology

The authors present a BJT (bipolar junction transistor) which is fabricated using a bulk CMOS technology. The device is essentially a MOSFET in which the gate and the well are internally connected to form the base of a lateral BJT. Complementary NPN and PNP BJTs with a current gain higher than 1000 are presented. Because of the moderate cutoff frequency (i.e., f/sub T/<5 GHz), the proposed BJT will mainly be used in BiCMOS processes for medium-speed, mostly CMOS, analog/digital applications.<>