Structural and electrical properties of iron-silicide thin film resistor deposited by cosputtering

The sheet resistance, TCR, thermoelectric power, and frequency characteristics of cosputtered iron-silicide thin film are examined. The values of sheet resistance and TCR for 1000-AA thick films are 20 Omega to 30 Omega and +200 to -4000 ppm/ degrees C, respectively, depending on composition in the range of 48 to 68 at.% Si. In particular, zero TCR film is formed at the composition of 54 at.% Si, and the film structure is considered to consist of FeSi and FeSi/sub 2/, which have positive and negative TCR, respectively.<>