Triggered Electroluminescence from a Strained Si1-XGeX/Si Single Quantum Well

Triggered electroluminescence is demonstrated in an electrically biased strained Si_1-xGe_x/Si single quantum well where otherwise spatially separated electron-hole pairs created through impact ionization are made to recombine upon removing the bias voltage, paving a way towards on-demand Si-based single photon emitters and optical memory application