1.8 V Power Supply 16 Mb-MRAMs With 42.3% Array Efficiency

Technologies for realizing high density MRAM were developed. First, new circuitry to lower the resistance of programming wires was developed. Second, both MTJ plane shape and cross-sectional structure were optimized to lower the programming current. Based on these two technologies, 16 Mb MRAM was designed, fabricated with 130 nm CMOS process and 240 nm back end MTJ process. As a result, a 1.8 V power supply MRAM with 42.3% array efficiency was successfully demonstrated