Scaling studies of GaAs FETs using a novel technique for simulation of non-stationary transport

An application of the Rees basis function technique to study nonstationary transport effects in self-aligned GaAs MESFETs as used in microwave control applications is described. The principle behind Rees' method and its numerical implementation are briefly discussed. A simple conducting state model for the FET is used to generate I-V characteristics using the stationary PISCES program. An argument is then presented to modify this information using a nonstationary simulation technique. Useful scaling information may be extracted from the resulting I-V curves.<>