New matching methodology of low-noise amplifier with ESD protection

A new matching design of low-noise amplifier (LNA) with ESD protection is proposed and implemented in an ESD-protected LNA, which manipulates the parasitic capacitance of ESD protection device as a core part of LNA matching network. Without significant degradation on RF performance, 4.5-kV human-body-model (HBM) and 250-V machine-model (MM) ESD levels can be achieved. The low RF-performance degradation and high ESD immunity can be simultaneously realized in a simple matching structure without extra circuit components dealing with ESD parasitics in a multi-GHz LNA.