High-efficiency GaAs solar cells grown on passive-Ge substrates by atmospheric pressure OMVPE

High-efficiency (up to 19%, AM0) GaAs solar cells on passive-Ge substrates have been grown by an atmospheric pressure OMVPE. A systematic study was carried out to find the optimum growth conditions. Results indicate that only a narrow temperature window (600-630 degrees C) for the initial layer growth will give the passive-Ge junction together with good GaAs solar cells.<>