Tunnelling current through ultra thin Silicon Dioxide in Submicronic MOS

Our work relates to the study of ultimate transistors MOS (metal oxide semiconductor) having a nanometric thicknesses of gate oxide (<10 nm). This thicknesses correspond to submicronic channel lengths (0.1- 0.5 μm). We are interested at the same time in the design and the characterization of these devices. The aim of our work is to highlight the tunnelling currents which appear for nanometric gate oxide thickness.