Space-charge storage in continuously irradiated dielectrics

A theory of space-charge buildup in dielectrics during continuous irradiation is developed. Open-circuit conditions are analyzed with one electrode grounded. In the irradiated region of the sample the following processes are taken into consideration: generation of mobile electrons and immobile holes, drift of electrons controlled by a capture into deep traps, thermally activated carrier release, and recombination of electrons and holes. Within the nonirradiated region, the same conditions for electron drift are assumed. Analytical solutions for the spatial distributions of the carrier densities and the time-dependent electric field are obtained.<>