Formation and characterization of aluminum-oxide by stack-layered metal structure Schottky diode

A double metals structure, Pt/Al/n-InP diode was studied. An Al2O3thin film was formed at the contact interface of the Pt/Al/InP diode after thermal annealing. It was detected at the diffraction angle of 2θ=20.4° by X-ray diffraction (XRD) analysis after the diode was annealed at 300°C or 400°C for 10 min. Also, from secondary ion mass spectrum (SIMS) analysis, it was found that the Al2O3thin film located at the contact interface of the Pt/Al/n-nP diode. The electrical characteristic was improved due to the formation of aluminum-oxide. The effective barrier height is equal to 0.74 eV which was measured on the annealed sample.