Fabrication of Ti-Al Ohmic Contacts to N-type 6H-SiC with P+Ion Implantation

The Ti-Al ohmic contact to n-type 6H-SiC has been fabricated. An array of TLM (transfer length method) test patterns with Au/Ti/Al/Ti/SiC structure is formed on N-wells created by P⁺ ion implantation into Si-faced p-type 6H-SiC epilayer. The specific contact resistance rho_c as low as 8.64 times 10^-6 Omegacm² is achieved after annealing in N₂ for 5 min at 900degC. The result for sheet resistance R_sh of the implanted layers is 975 Omega/square. The low resistance contact would be attributed to the formation of Ti₃SiC₂ at the metal/n-SiC interface after thermal annealing