On the Recovery of Simulated Plasma Process Induced Damage in High- κ Dielectrics

A detailed analysis of the ability of high-k materials to recover from plasma damage, as simulated by Fowler-Nordheim stress is presented. Forming gas and high temperature rapid thermal anneal (RTA) steps are compared to determine their efficiency at trap recovery. The annealing responses of the technologically relevant HfSiON and HfO₂ materials (EOT<2nm) are correlated with structural differences in these dielectrics, as well as the trap generation rate, centroids and defect de-passivation. We show that plasma damage can be successfully recovered for HfO₂ by high temperature annealing