A 75 V Lateral IGBT for Junction-Isolated Smart Power Technologies

A 75 V, lateral insulated gate bipolar transistor (LIGBT) is demonstrated in a junction-isolated technology. This device is implemented in a standard smart power technology with a 0.35mum CMOS core. The nLIGBT exhibits a fourfold increase in current density compared to a nVDEMOS in the same technology. A double buried layer structure effectively suppresses substrate currents, provides the floating capability (the nLIGBT can be used as a high-side switch), ensures high latching currents, and yields fast switching speeds