Dynamic Behavior of High-Power Diodes Analyzed by EBIC

A setup is described which allows investigations of electric field distributions in the top layers of a dynamically driven power device by means of time-resolved electron beam induced currents (EBIC). Functionality of the field termination structures, e.g. guard rings can be visualized under transient bias conditions. Reverse and forward recovery of an 800-V diode was investigated by this technique and the obtained results were compared to EBIC-maps recorded on a statically biased device