New extra fast soft recovery diodes and their applications

A new range of 1.7 kV, 2.5 kV and 4.5 kV extra fast soft recovery diodes that are optimised for use with press-pack IGBTs and GCTs are described. By using heavy metal diffusion and ion implantation for profiled lifetime control, an optimum trade-off in static and dynamic parameters can be achieved. The new diodes appear to be outstanding in their dynamic characteristics, such as very soft recovery, reverse recovery di/dt > 5000 A/mus and low reverse peak current. The new devices also have high maximum operating temperature, low blocking leakage and positive V_F temperature coefficient at rated current level, which is advantageous for parallel applications