A Schottky barrier diode ultra-wideband amplitude modulation (AM) detector in foundry CMOS technology

Utility of Schottky diodes fabricated in foundry digital 130-nm CMOS technology is demonstrated by implementing an ultra-wideband (UWB) amplitude modulation detector consisting of a low noise amplifier (LNA), a Schottky diode rectifier, and a low-pass filter. The detector is matched to 50 /spl Omega/, from 0-10.3 GHz and 0-1.7 GHz at the input and output, respectively and almost covers the entire UWB frequency range (3.1-10.7 GHz). The measured peak conversion gain is -2.2 dB, the sensitivity over the band is between -53 and -56 dBm, and power consumption is only 8.5 mW.