An empirical large signal model for silicon carbide MESFETs

In this paper, a large signal table-based model for SiC MESFET is presented. A packaged commercially available high power MESFET device (CREE CRF24010) is adopted for the model development. The extracted bias-dependent elements of the small signal model as well as the measured DC data are mathematically described by small modification of Angelov's formulation. Dispersion between DC and RF characteristics of the drain current is also observed and interpreted. The new model is capable to predict small signal as well as large signal performance accurately. A single stage ultra broadband 5 W power amplifier has been developed to verify the derived model. A good agreement has been obtained between simulated and measured results.