InP/GaAsSb/InP DHBT monolithic transimpedance amplifier with large dynamic range

InP/GaAs/sub 0.51/Sb/sub 0.49//InP DHBT (double heterojunction bipolar transistor) technology is investigated and presented for low power consumption and high power microwave amplification. A low power monolithic transimpedance circuit using InP/GaAsSb/InP DHBTs presented a 11.0 dB gain, 9.5 GHz bandwidth, 46 dB/spl Omega/ transimpedance, and a corresponding gain-bandwidth of 1.880 THz-/spl Omega/. The power characteristics of the DHBT devices have not been discussed extensively in the past and are shown here to present large 1 dB-compressed output power corresponding to 0.76 mW//spl mu/m/sup 2/ at 5 GHz and high efficiency due to the use of an InP collector. This opens the possibility for transimpedance amplifier use in applications where an input signal with large dynamic range may be present.