Enhanced Mobility for Pentacene TFT Built on NH3- Annealed Thermally Grown SiO2

We have enhanced the mobility of pentacene OTFTs using NH3-annealed SiO2as gate dielectric and this annealing method is often applied in the semiconductor industry for inorganic transistors. The device has field-effect mobility higher than 0.5 cm²/Vs, with on/off current ratio larger than 10⁶, and subthreshold slope less than 2.5 V per decade. When compared with the control sample, which uses N2-annealed SiO2, the mobility of the proposed pentacene OTFT increases by over 50%.