A Fully Integrated SiGe Low Noise Amplifier for 3-5GHz Ultra-WideBand Radio

A fully integrated low-frequency band (3.1-5 GHz) UWB LNA was designed and implemented with Jazz 0.35μm SiGe BiCMOS (peak fT60 GHz) process. The measured maximum power gain is 15.7 dB at 3.5 GHz with 0.6dB gain flatness over the whole operating bandwidth. And the minimum noise figure 3.8 dB is achieved at 4GHz. The whole circuit including the bias circuit network consumes 7mA with 3V supply and only occupies 0.65 mm x 0.9mm.