Nondestructive Depth Profiling of Gate Insulators by Angle-Resolved Photoelectron Spectroscopy

Our detailed study on the composition and the chemical structure of oxynitride films was reviewed. The structure of oxynitride/Si interface was determined from the nearest neighbors of a nitrogen atom and those of a silicon atom detected by X-ray photoelectron spectroscopy. The depth profiles of composition and chemical bonding configuration of nitrogen atoms were determined by applying maximum entropy concept to the angle-resolved photoelectron spectroscopy.