Correlation of the leakage current and charge pumping in SIMOX gated diodes

Gated diodes are very appropriate devices for film and interface characterization in fully depleted SOI (silicon-on-insulator) structures as both leakage current and charge pumping measurements can be performed. The author clarify the merits of each technique, discuss the complementary and overlapping aspects, and correlate the data. Attention is given to P/sup +/PN/sup +/ diodes fabricated on SIMOX (separation by implanted oxygen) wafers implanted with 100 mA beam, 200 keV energy, and 1.8*10/sup 18/ O/cm/sup 2/ dose, and annealed at 1300 degrees C in argon. The Si film was 150-nm thick.<>