High Productivity Single Wafer Radical Oxidation System

This paper introduces a high productivity single wafer radical oxidation system developed for ≤90nm device node. Today's semiconductor device manufacturers face dual challenges of increased technical complexity at virtually every process step, and fast introduction of new products with minimal cost. Up until now, furnaces have satisfied the thermal oxidation requirements in most fabs. The scaling of advanced devices requires higher quality oxides, tighter process control, and smaller thermal budgets at significantly reduced overall processing cost. RadOx^™processes have already demonstrated advantages in a variety of applications for current devices, and have been well accepted by many device manufacturers. The availability of RadOx^™processes on a reliable, small-footprint platform with reduced pressure capability will enable the technical advantages of single-wafer radical oxidation and the manufacturing requirements for today's economic environment. The Applied Vantage^®platform has already gained wide acceptance for implant and silicide anneals, and with the introduction of Applied Vantage^®RadOx^™, the suite of applications is extended to include reduced pressure processes such as RadOx^™. Process and system performance will be presented in this paper with emphasis on the chamber & platform technology elements that enable single-wafer radical oxidation on an industry-proven, cost-effective platform.