An implant-free AlGaAs/GaAs HBT IC technology incorporating 1.4 THz Schottky diodes

A non-self-aligned HBT (heterojunction bipolar transistor) process capable of 45 GHz f/sub T/ and f/sub max/ with 1.4-THz Schottky diodes is reported. An HBT divide-by-eight prescalar circuit clocks at 13.5 GHz and a pulser circuit using Schottky diodes demonstrates 8.6-ps rise time. This process provides Schottky diodes suitable for sampler/pulser applications as well as nichrome resistors, MIM capacitors, and air-bridge inductors. The process does not use ion-implantation for isolation or reduction of collector capacitance.<>