100 MHz-500 MHz, 1 Watt distributed power amplifier with discrete MOSFET devices

This paper describes the design of a discrete MOSFETs distributed power amplifier with 1 Watt output power in the 100 MHz-500 MHz frequency range. The circuit was fabricated in discrete form by using three MOSFET devices (RD01MUS1 from Mitsubishi) with 50 Ohms input and output impedance. Experimental and simulation results of such a structure are discussed.