Application of test & measure in microwave device characterization

This paper describes the application of T&M (test and measure) in device characterization which is used in RF/MW field. With the on-wafer measured results of CV, IV and S-parameter in certain bias conditions, the performance of devices can be expressed and modeled in a clear form. The process according to the application is fit for cogeneric transistor, e.g. BJT, HBT etc. A GaAs HBT transistor has been demonstrated as an example in this paper.