K-band BiCMOS SiGe based micromixer with enhanced linearity performances

A theoretical analysis and design methodology of a K-band micromixer structure are presented in this paper. Excellent linearity is observed from the measurements for a moderated supply current (Ic). In the optimum conditions, local oscillator power P/sub LO/ = -2dBm and bias current Ic = 25mA, the third intercept point referred to the output (OIP3) and the differential conversion gain (Gc) are respectively measured at +12dBm and +7.7dB. The fabricated mixer is integrated using a SiGe technology and the entire chip occupies an area of 3.6 mm/sup 2/ mainly due to extra LC filters which improve RF performances.