Monolithic integrated C-band low noise amplifier using AlGaN/graded-AlGaN/GaN HEMTs

Monolithic integrated C-band low noise amplifier using 1 /spl mu/m-gate AlGaN/graded-AlGaN/GaN HEMT device was designed, fabricated and characterized. The LNA demonstrated a noise figure of 2.7 dB, an associated gain of 10.8 dB, an input return loss of -5.5 dB at 6 GHz, and an output return loss of -18 dB at 7 GHz. The IIP3 of the LNA is 12 dBm at 6 GHz. The LNA with 1 /spl mu/m /spl times/ 100 /spl mu/m device shows very high-dynamic range with decent gain and noise figure.