Formation and characterization of sputtered thin film for optimizing multilayered interconnection structure

UBM (under barrier metal) mounted in multilayered interconnection structure is thin film using to prevent counter diffusion between semiconductor substrate and metal line, in connection with multilayered and minute structure, thickness of UBM becomes an issue. Evaluation of UBM with the use of TEG (test element grid) chip was conducted. TEG chip is a unit device that decollates elemental structure of circuit from LSI. With the use of TEG chip, various evaluations concerning LSI structure can be easily conducted. For these reasons, the purposes of this research are to design and to manufacture TEG chip, which have relatively simple multilayered interconnection structure, and also, examinations of optimal material such as Ti-W and morphology of UBM for obtaining superior electro-migration resistance were conducted.