A 5.25-GHz Low Noise Amplifier for WMAN Applications in a 0.18- μm CMOS Technology

A 5.25-GHz low noise amplifier (LNA), has been proposed for use in a receiver architecture for IEEE802.16a WMAN. The targeted frequency band is the un-licensed band U-Nll 5 GHz. The amplifier provides voltage gain of 16 dB with a noise figure of only 1.8 dB, the IIP3 is +2-dBm and the reverse isolation is about -15 dB. Using a 0.18μm CMOS process, the LNA dissipates 7.8 mW from a 1.8V supply voltage. In this paper, we present an analysis of the LNA architecture, including the effects of induced gate noise in MOS devices.