a-Si:H (alloy) p-i-n superlattice solar cell contacts

A means of increasing the open-circuit voltage of p-i-n amorphous silicon-based solar cells without degrading their other properties is proposed. This is accomplished through the use of superlattices that replace the n and p contact regions. The proposed structure is a-Si:H/a-Si/sub 0.8/N/sub 0.2/:H for the p contact and a-Si:H/a-Si/sub 0.5/C/sub 0.5/:H for the n contact. Using reasonable values for relevant parameters, the proposed structure may have an open-circuit voltage higher than that of present cells by as much as 0.20 V.<>