Low temperature growth of GaNAs toward creation of GaNAsBi

In this study, MBE growth of GaN/sub y/As/sub 1-y/ at a low T/sub sub/ was studied based on X-ray diffraction (XRD) and secondary ion mass spectroscopy (SIMS). Recently, GaN/sub y/As/sub 1-y/Bi/sub x/ has been successfully created on the basis of both this study and MBE growth of GaAs/sub 1-x/Bi/sub x/. GaN/sub y/As/sub 1-y/ was grown on a GaAs(100) substrate using solid sources of Ga, As and Bi. Activated nitrogen generated from N/sub 2/ gas in rf plasma was used as a nitrogen source. The GaAs substrate was pre-treated by thermal flush at T/sub sub/ of 600/spl deg/C, followed by GaAs growth at T/sub sub/ of 500/spl deg/C. GaN/sub y/As/sub 1-y/ layers with a thickness approximately 500 nm were grown on the GaAs layer at T/sub sub/ ranging 260/spl deg/C and 400/spl deg/C. CaN/sub y/As/sub 1-y/ epilayers grown at F/sub sub/ ranging 260/spl deg/C and 400/spl deg/C showed XRD patterns with clear thickness fringes, which indicates that good crystal quality was achieved even though the epilayer was grown at T/sub sub/ of 260/spl deg/C. To clarify lattice deformation of GaN/sub y/As/sub 1-y/epilayers, we carried out XRD measurements regarding (400) and (511) diffractions.