Near field and far field analysis of alternating impedance electromagnetic bandgap (AI-EBG) structure for mixed-signal applications

This paper presents near field (NF) and far field (FF) analysis of alternating impedance electromagnetic bandgap (AI-EBG) structure in package and board. Three test vehicles have been designed and fabricated for near field and far field measurements. Simulation results using a full wave solver (SONNET/spl trade/) have been compared with measurement results. This paper investigates the radiation due to return current on different reference planes. The analysis results from simulations and measurements provide important guidelines for design of the AI-EBG structure for noise reduction in mixed-signal systems.