A study of the thermal oxidation of TaSi/sub 2/ and Ta/sub 2/Si silicides to form dielectric layers for MIS structures on 4H-SiC

Some physical and electrical characteristics of the insulator layers produced by the deposition of the Ta₂Si and TaSi₂ tantalum silicides on 4H-SiC substrates and subsequent oxidation are compared in this paper. The thermal oxidation of both silicides on silicon carbide substrates, produces insulator layers with relatively good interfacial properties. The lower interface traps density and oxide charge and especially, the higher dielectric constant, make the product of the Ta₂Si oxidation more suitable than the one from TaSi ₂ for gate applications. However, the oxidized TaSi₂ layers present improved dielectric strength with reduced leakage current