Development of laser diode layers based upon III-V compound semiconductors in the wavelength range from 0.7 /spl mu/m to 0.9 /spl mu/m

This paper is based on the work done to grow the semiconductor layers of III-V compound, based on AIGaAs/GaAs for the laser diode. The Laser diode is an optoelectronic device that consists of many layers stacked one upon the other. Laser diodes based on the III-V compound is preferred because of high mobility of electrons, low mass and direct band gap as compared to Si. The semiconductor layers of the laser diode are grown by Molecular Beam Epitaxy system because MBE is capable of producing extremely high purity and highly crystalline thin films with precise control over composition, doping and interfaces in fraction of nanometer range in the growth direction with precise lateral uniformity. To grow the high quality layers, one has to optimize the various growth parameters such as pressure, temperature and flux ratio etc. In this paper we discuss the growth of the semiconductor layers of GaAs/AIGaAs for the double heterostructure laser diode by optimizing the various growth parameters.