Higher k HfTaTiO gate dielectric with improved material and electrical characteristics

Physical and electrical characteristics of HfTaTiO gate dielectric have been systematically investigated for the first time. HfTaTiO has a higher dielectric constant (kappa~56) and acceptable barrier height to Si (phi=1.0eV), and ultra-thin EOT(~9Aring) has been achieved. HfTaTiO dielectric shows higher crystallization temperature (900degC), reduced hysteresis, 50% higher mobility and improved V_th instability than HfO₂. Moreover, HfTaTiO exhibits excellent SILC and breakdown characteristics